TARANTO aims to break down technological barriers standing in the way of the next generation BiCMOS technology platforms, combining improved radio-frequency performance of Heterojunction Bipolar Transistors (HBT) with the high level of integration. High-speed, high-data rate and affordable communication systems, for example 5G, that are enabled by TARANTO are mandatory in, for example, intelligent, automated transport systems. The superior radio-frequency performance of SiGe HBT makes BiCMOS technologies a key enabler for many applications which require (RF) front ends with the high computational power and low power consumption. The main technology objective is to develop HBTs offer- ing high maximum frequency (Fmax: 600GHz) built into very high density CMOS processes from different sup- pliers: 130 / 90nm from Infineon and 55 / 28nm from ST Microelectronics, while IHP will work to achieve maximum frequencies of 700GHz seeking compatibility with Infineon and ST BiCMOS processes. This new generation of fast transistors will be a key factor in meeting the needs of high-speed communication systems such as 5G, deployment in the millimetre wave bands, and within Internet infrastructures. The consortium, that gathers the main European players in the value chain for these very high frequency applications, will develop the modelling and characterization means necessary to assess state-of-the-art operating ranges for silicon technologies, and will also demonstrate the capabilities of the technologies through demonstrators at various levels of the integration chain.